Microwave transistor

Details Microwave transistor Microwave transistor

1981-12-07

1984-01-31

Saba, W. G.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29580, 29590, 29591, 148175, 156647, 156649, 156662, 357 34, 357 55, 357 56, 357 89, H01L 21203, H01L 21302

Patent

active

044281110

ABSTRACT:
A process for fabricating a high speed bipolar transistor is described wherein the collector, base and emitter layers are first grown using molecular beam epitaxy (MBE). A mesa etch is performed to isolate a base-emitter region, and a contact layer is grown using MBE over this isolated region to make contact with the thin base layer. The contact layer is selectively etched to expose the emitter layer, and metal is deposited to fabricate emitter, base and collector contacts.

REFERENCES:
patent: 3394289 (1968-07-01), Lindmayer
patent: 3488235 (1970-01-01), Walczak et al.
patent: 3576683 (1971-04-01), Matsubara
patent: 3648123 (1972-03-01), Ernick et al.
patent: 4226648 (1980-10-01), Goodwin et al.
Swartz et al., "An Uncompensated Silicon Bipolar Junction Transistor . . . . " IEEE Electron Device Letters, vol. EDL-2, No. 11, Nov. 1981, pp. 293-295.
Ota, Y., "Silicon Molecular Beam Epitaxy with . . . Doping" J. Appl. Phys., vol. 51 (2), Feb. 1980, pp. 1102-1110.
Nakamura et al., "Self-Aligned Transistor with Sidewall Base Electrode" International Solid-State Circuit Conf. (IEEE), Feb. 1980, pp. 214-215.
Sze, S. M., Physics of Semiconductor Devices (Textbook), John Wiley and Sons, N.Y., 1961, pp. 279-289.
Boss et al., "Epitaxial Transistor with exposed Base Contact" I.B.M. Tech. Discl. Bull., vol. 10, No. 2, Jul. 1967, p. 166.

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