Low supply voltage sub-bandgap reference

Details Low supply voltage sub-bandgap reference Low supply voltage sub-bandgap reference

1997-09-10

2000-04-18

Cunningham, Terry D.

Miscellaneous active electrical nonlinear devices, circuits, and

Specific identifiable device, circuit, or system

With specific source of supply or bias voltage

327341, 323313, 323316, G05F 110

Patent

active

060520205

ABSTRACT:
A sub-bandgap reference circuit yielding a reference voltage smaller than the bandgap voltage of silicon. The circuit generates a negative temperature coefficient signal V.sub.be and an oppositely tracking (positive temperature coefficient) .DELTA.V.sub.be, and takes the average of two signals related to .DELTA.V.sub.be -V.sub.be to yield a temperature-compensated voltage of one-half the bandgap voltage of silicon. The circuit features an unequal area current mirror feeding the diodes and resistors used to generate the .DELTA.V.sub.be -V.sub.be signals using low supply voltages (less than 1.5 volts). A standard CMOS implementation provides low power consumption at a supply voltage of only 1 volt with a good temperature coefficient. The averaging circuit may be implemented by a continuous time divider or by using switched capacitor techniques. The loop amplifier used in the .DELTA.V.sub.be -V.sub.be circuitry operates with low headroom in part due to a n-well biasing scheme that lowers the effective threshold voltage of the p-channel FETs used in the loop amplifier.

REFERENCES:
patent: 5541551 (1996-07-01), Brehner et al.
patent: 5568045 (1996-10-01), Koazechi
patent: 5821807 (1998-10-01), Brooks
patent: 5867013 (1999-02-01), Yu

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