Method of testing a transistor

Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

G01R 3126

Patent

active

06051986&

ABSTRACT:
A method of testing for a kink effect typically occurring during the fabrication of shallow trench isolation of a transistor in an integrated circuit. A curve of source/drain current versus gate voltage is plotted. A second order differential of the curve is performed and plotted, and the existence of a kink effect is determined by the number of the local maxima and local minima. The degree of kink effect as low as and below a 0.25 .mu.m level is determined according to the level of a global minimum value.

REFERENCES:
patent: 4053916 (1977-10-01), Cricchi et al.
patent: 4680810 (1987-07-01), Swartz
patent: 4795976 (1989-01-01), Pawlik
patent: 4979014 (1990-12-01), Heida et al.
patent: 5420055 (1995-05-01), Vu et al.
patent: 5767549 (1998-06-01), Chen et al.
patent: 5821575 (1998-10-01), Mistry et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of testing a transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of testing a transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of testing a transistor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2338852

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.