Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element
Patent
1997-12-29
2000-04-18
Ballato, Josie
Electricity: measuring and testing
Fault detecting in electric circuits and of electric components
Of individual circuit component or element
G01R 3126
Patent
active
06051986&
ABSTRACT:
A method of testing for a kink effect typically occurring during the fabrication of shallow trench isolation of a transistor in an integrated circuit. A curve of source/drain current versus gate voltage is plotted. A second order differential of the curve is performed and plotted, and the existence of a kink effect is determined by the number of the local maxima and local minima. The degree of kink effect as low as and below a 0.25 .mu.m level is determined according to the level of a global minimum value.
REFERENCES:
patent: 4053916 (1977-10-01), Cricchi et al.
patent: 4680810 (1987-07-01), Swartz
patent: 4795976 (1989-01-01), Pawlik
patent: 4979014 (1990-12-01), Heida et al.
patent: 5420055 (1995-05-01), Vu et al.
patent: 5767549 (1998-06-01), Chen et al.
patent: 5821575 (1998-10-01), Mistry et al.
Ballato Josie
Sundaram T. R.
United Microelectronics Corp.
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