Semiconductor device including self-aligned base and emitter ele

Details Semiconductor device including self-aligned base and emitter ele Semiconductor device including self-aligned base and emitter ele

1998-01-14

2000-04-18

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With specified electrode means

438325, H01L 21265

Patent

active

060518731

ABSTRACT:
An oxide film mask 6b of a desired shape is formed on the surface of a polysilicon film 5a which becomes a base electrode and the top of the polysilicon film 5a is isotropically etched with the mask 6b, then the polysilicon film 5a is anisotropically etched with the same mask 6b for exposing an epitaxial layer 3.

REFERENCES:
patent: 4492008 (1985-01-01), Anantha et al.
patent: 5288652 (1994-02-01), Wang et al.
patent: 5557131 (1996-09-01), Lee
S. Wolf and R.N. Tauber "Silicon Processing for The VLSI Era" Lattice Press, v. 1, p. 522, 1986.

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