Thin film static induction transistor and method for manufacturi

Details Thin film static induction transistor and method for manufacturi Thin film static induction transistor and method for manufacturi

1986-09-25

1988-07-05

Carroll, James J.

357 2, 357 15, 357 20, 357 22, 357 231, 357 2315, 357 54, 357 55, 357 56, 357 88, 357 89, 357 90, H01L 2978, H01L 2980, H01L 2934, H01L 2906

Patent

active

047558598

ABSTRACT:
A thin film static induction transistor comprises a first n type semiconductor layer provided on an insulative substrate and a second n type semiconductor layer mounted on the first layer. The second layer includes a first region having a first level top wall and a second region having a second level top wall lower that the first level top wall. The first and second regions are alternately arranged. A third semiconductor layer is provided on the first level top wall. A recess is formed which includes side walls of the third layers, side wall of the first regions and the second level top wall. A fourth semiconductor layer is deposited on the inner wall of the recess, and a gate electrode is provided on the fourth layer. The fourth layer consists of an intrinsic semiconductor layer or a semiconductor layer having a lower impurity concentration than the second layer.

REFERENCES:
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patent: 4611384 (1986-09-01), Bencuyer et al.
J.J.A.P. vol. 24, No. 4 (1985), pp. 467-471; "Amorphous Silicon Static Induction Transistor"; M. Ueda et al.

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