Znse green light emitting diode

Details Znse green light emitting diode Znse green light emitting diode

1983-07-05

1988-07-05

Sikes, William L.

Fishing, trapping, and vermin destroying

148171, 437130, H01L 3300

Patent

active

047558563

ABSTRACT:
A green color light emitting ZnSe diode having a pn junction is fabricated by the use of a ZnSe crystal having a good crystal perfection and being obtained by a solution growth method relying on the temperature difference technique using a solvent containing at least Te and Se and using atoms of at least one kind of impurity selected from Group Ib elements of the Periodic Table as a principal impurity for producing a p type region in the crystal.

REFERENCES:
patent: 4389256 (1983-06-01), Nishizawa et al.
patent: 4465527 (1984-08-01), Nishizawa
patent: 4526632 (1985-07-01), Nishizawa et al.
F. V. Wald and G. Entine, "Crystal Growth of CdTe for .gamma.-Ray Detectors" Nuclear Instruments and Methods 150 (1978) pp. 12-23.

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