Method and apparatus for analyzing semiconductor devices using c

Electricity: measuring and testing – Measuring – testing – or sensing electricity – per se – With rotor

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324 73R, 324158D, G01R 3128

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047557486

ABSTRACT:
In order to determine whether defects are present in a semiconductor device (103) biased to its normal operating levels, a scanning electron microscope (101) equipped with an electron beam blanker (102) scans the device with a pulsed electron beam. Charge carriers generated within the device in response to each pulse of electrons are collected and amplified by a charge carrier sensitive preamplifier (114) to produce a voltage signal which when applied to a CRT (118) produces an image of the semiconductor. Defects in the device can be located from irregularities in the image and the presence of bias dependent defects can be ascertained by varying the bias current supplied (113) to the device and noting changes in the image.

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