Surface emitting laser

Details Surface emitting laser Surface emitting laser

1991-11-01

1993-04-27

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 50, 372 92, H01S 319

Patent

active

052068722

ABSTRACT:
Reduction of laser threshold in an electrically pumped vertical cavity laser is the consequence of interpositioning of an electrode layer intermediate the active, photon producing region, and at least one of the two Distributed Bragg Reflectors defining the laser cavity. The advance is a consequence of the lowered pump circuit resistance due to elimination of one or both DBRs--in particular, to elimination of the p-doped DBR--from the pump circuit.

REFERENCES:
patent: 4991179 (1991-02-01), Deppe et al.
patent: 4999842 (1991-03-01), Huang et al.
J. L. Jewell et al, "Surface-emitting microlasers for photonic switching and interchip connections", Optical Engineering, vol. 29, No. 3 (Mar. 1990).
Y. J. Yang et al, "Low-threshold operation of a GaAs single quantum well mushroom structure surface-emitting laser", App. Phys. Lett., 58 (16), pp. 1780-1782 (Apr. 1991).
C. R. Abernathy et al, "Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy", App. Phys. Lett., 55 (17), pp. 1750-1752 (Oct. 1989).
P. L. Gourley and T. J. Drummond, "Single crystal, epitaxial multilayers of Al As, GaAs, and Al.sub.x Gal.sub.1-x As for use as optical interferometric elements", Appl. Phys. Lett. 49(9), pp. 489-491 (Sep. 1986).
Y. Arakawa and A. Yariv, "Theory of Gain, Modulation Response, and Spectral Linewidth in AlGaAs Quantum Well Lasers", IEEE Journal of Quantum Electronics, vol. QE-21, No. 10, pp. 1666-1674 (Oct. 1985).

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