Method and apparatus for semiconductor filming

Details Method and apparatus for semiconductor filming Method and apparatus for semiconductor filming

1998-05-18

2000-04-18

Bueker, Richard

Coating apparatus

Gas or vapor deposition

C23C 1600

Patent

active

060510722

ABSTRACT:
A method of semiconductor filming wherein a thin film is deposited on a wafer under an atmospheric pressure, which comprises the steps of simultaneously supplying a reactive gas and an inert gas to a reaction tube and maintaining a partial pressure of the reactive gas constant by adjusting the flow rates of those gases, whereby stability in film quality is improved.

REFERENCES:
patent: 3653399 (1972-04-01), Steele
patent: 5250323 (1993-10-01), Miyazaki
patent: 5653807 (1997-08-01), Crumbaker

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