1986-11-21
1988-03-08
Edlow, Martin H.
357 2311, 357 2313, 357 51, 357 52, 357 59, H01L 2978, H01L 2702, H01L 2904
Patent
active
047302089
ABSTRACT:
A semiconductor device including an input circuit, in which an impurity region is formed in a semiconductor substrate under the input circuit. This impurity region has a conductivity type opposite to that of the substrate or at least has a lower impurity concentration than that of the substrate. According to this structure, the input voltage capability of the device is improved. Additionally, the fabrication methods of this semiconductor device are disclosed.
REFERENCES:
patent: 3748547 (1973-07-01), Sugimoto
patent: 4133000 (1979-01-01), Greenstein
patent: 4285001 (1981-08-01), Gerzberg et al.
Morikuri Akira
Sugino Eitaro
Edlow Martin H.
Featherstone D.
Tokyo Sahbaura Denki Kabushiki Kaisha
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