Non-single-crystal semiconductor light emitting device

Details Non-single-crystal semiconductor light emitting device Non-single-crystal semiconductor light emitting device

1986-03-24

1988-03-08

Edlow, Martin H.

357 16, 357 17, 357 2, H01L 2712

Patent

active

047302070

ABSTRACT:
A non-single crystal semiconductor light emitting device comprising a non-single crystal semiconductor region formed by a non-single crystal semiconductor laminate member made up of a plurality m (where m.gtoreq.3) of non-single-crystal semiconductor layers M.sub.1, M.sub.2, . . . and M.sub.m sequentially laminate in this order. The thickness of each M.sub.1, M.sub.2 . . . M.sub.m is 100 .ANG. or less.

REFERENCES:
patent: 4559552 (1985-12-01), Yamazaki
Abeles et al., Phys. Rev. Lett., vol. 51, No. 21, Nov. 21, 1983.

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