Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1993-09-15
1996-08-20
Fahmy, Wael M.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
257194, H01L 310328, H01L 310336
Patent
active
055481388
ABSTRACT:
In a semiconductor device using tunnel current and a barrier layer, arrangements are provided to lower the resistance of the semiconductor device. In particular, arrangements are provided to lower the parasitic resistance of a device such as a field effect transistor or an HBT, as well as to provide high-performance low noise amplifiers, mixers and the like using such reduced resistance semiconductor devices. To achieve this reduced resistance, carrier concentration or effective mass is designed not to be uniform in at least one of the semiconductor layers holding a barrier layer therebetween. For example, in an area near the barrier layer, the carrier concentration distribution can be large or the effective mass distribution can be small.
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Kudo Makoto
Mishima Tomoyoshi
Mori Mitsuhiro
Nakajima Akishige
Tanimoto Takuma
Fahmy Wael M.
Hitachi , Ltd.
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