Semiconductor component arrangement for overvoltage protection o

Details Semiconductor component arrangement for overvoltage protection o Semiconductor component arrangement for overvoltage protection o

1995-03-03

1997-05-27

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257143, H01C 2702

Patent

active

056335156

ABSTRACT:
MOSFET and IGBT components protected against overvoltage by a limiting diode inserted between drain or, respectively, collector terminal and gate terminal are provided. A freewheeling diode connected to the component having a limiting diode with a breakdown voltage that is lower than the breakdown voltage of the freewheeling diode by a defined amount is provided. This over-voltage protection can be achieved in a simple way by integrating the limiting diode into the semiconductor body of the freewheeling diode and by a corresponding arrangement of the anode zone of the limiting diode.

REFERENCES:
patent: 5294843 (1994-03-01), Tursky et al.
patent: 5360984 (1994-11-01), Kirihata
J. Enzinger et al., "SMART-Power-Bauelemente auf der Basis der SIPMOS-Technologie", Markt & Technik, Design & Elektronik, Ausgabe 21, Oct. 14, 1986.

Affiliated with

Also associated with

Rating

Semiconductor component arrangement for overvoltage protection o does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor component arrangement for overvoltage protection o, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor component arrangement for overvoltage protection o will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2331169