Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent
1995-12-11
1997-05-27
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
257 96, 257 97, 257103, 257200, 372 43, 372 44, 372 45, H01L 3300
Patent
active
056335148
ABSTRACT:
The semiconductor light emitting device includes a semiconductor substrate (1), a first conductivity type first cladding layer (2) deposited on the semiconductor substrate (1), an active layer (4) deposited on the first cladding layer (2), and the second conductivity type second cladding layer (6) deposited on the active layer (4). The first and the second cladding layers (2, 6) are made of the II/VI-compound semiconductors including at least one kind of group II elements such as Zn, Hg, Cd, Mg and at least one kind of group VI elements such as S, Se, Te. The lattice mismatching .DELTA.a/a (%) between at least one of the first cladding layer (2) and the second cladding layer (6) and the substrate is set within the range of -0.9%.ltoreq..DELTA.Aa/a.ltoreq.0.5% (reference symbols a and a.sub.c represent the lattice constant of the semiconductor substrate and the lattice constant of at least either of the first and second cladding layers, and .DELTA.a is obtained from .DELTA.a=a.sub.c -a).
REFERENCES:
patent: 5081632 (1992-01-01), Migita et al.
patent: 5268918 (1993-12-01), Akimoto et al.
patent: 5291507 (1994-03-01), Haase et al.
patent: 5299217 (1994-03-01), Migita et al.
Akimoto Katsuhiro
Hino Tomonori
Ikeda Masao
Ishibashi Akira
Ito Satoshi
Mintel William
Sony Corporation
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