Method and apparatus for in situ removal of contaminants from io

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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2504922, 250251, H01J 3736

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active

056335067

ABSTRACT:
Method and apparatus are provided for removal of contaminant material adhered to interior surfaces of an ion beam neutralization apparatus and ion implantation apparatus of an ion beam implanter. Contaminant material is removed from the neutralization apparatus and the implantation apparatus using a plasma glow discharge. The contaminant material is also removed from the neutralization apparatus by expanding the ion beam.

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Materials Research Corporation, "The Basics of Plasmas," Hinson, Copyright 1984, pp. 1-36.

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