Structural modification to enhance DRAM gate oxide quality

Details Structural modification to enhance DRAM gate oxide quality Structural modification to enhance DRAM gate oxide quality

1994-06-29

1996-08-20

Thomas, Tom

Fishing, trapping, and vermin destroying

437 60, 437235, H01L 218242

Patent

active

055478913

ABSTRACT:
The invention discloses modifying the surface of a device to reduce transition region growth so that higher anneal temperatures can be used with the device to optimize dielectric quality, reduce defect density, and achieve the lowest possible dielectric leakage. One method of surface modification occurs when an impurity such as germanium is added to a silicon surface before deposition of TA 205 to serve as a diffusion barrier or retardant, which would inhibit the growth of the silicon TA205 transition region at higher temperatures and prevent capacitance degradation. Germanium is a good choice for this application because of its similarities to silicon. However, other materials can also serve as barriers.

REFERENCES:
patent: 3878549 (1975-04-01), Yamazaki et al.
patent: 4940076 (1990-04-01), Hollam et al.
patent: 5384152 (1995-01-01), Chu et al.

Affiliated with

Also associated with

Rating

Structural modification to enhance DRAM gate oxide quality does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Structural modification to enhance DRAM gate oxide quality, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structural modification to enhance DRAM gate oxide quality will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2330456