DRAM cell with a cradle-type capacitor

Details DRAM cell with a cradle-type capacitor DRAM cell with a cradle-type capacitor

1995-05-05

1996-08-20

Tsai, H. Jey

Fishing, trapping, and vermin destroying

437 47, 437 60, 437919, H01L 2170, H01L 2700

Patent

active

055478905

ABSTRACT:
An efficient method for manufacturing a cradle-shape capacitor for use as part of a DRAM cell in a silicon integrated circuit is described. The effective area of the capacitor plates is increased by providing a trench along the center of the capacitor which has the form of a polysilicon rectangular prism. The trench is formed by locating a heavily doped layer of silicon oxide on the surface and then heating the structure to a degree sufficient to cause significant outdiffusion of dopant from the silicon oxide into the polysilicon. A selective etching procedure is then used to remove only the area into which dopant has diffused, thereby creating the aforementioned trench.

REFERENCES:
patent: 5266514 (1993-11-01), Tuan et al.
patent: 5286668 (1994-02-01), Chou et al.
patent: 5292677 (1994-03-01), Dennison
patent: 5336638 (1994-08-01), Suzuki et al.

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