Fishing – trapping – and vermin destroying
Patent
1995-06-06
1998-01-06
Niebling, John
Fishing, trapping, and vermin destroying
437192, 437198, 437981, H01L 2128
Patent
active
057054290
ABSTRACT:
After forming a contact hole in an insulator layer, which is formed on a substrate covering an impurity doped region, a Ti film, a TiN film (or TiON film), and an Al alloy (for example, an alloy of Al--Si--Cu) layer are sputtered (consecutively from the bottom level) for forming a wiring material layer. A wiring layer is formed by patterning the wiring material layer in accordance with a wiring pattern. Portions with a 0% coverage of the Al alloy layer are eliminated by sputtering the Al alloy layer with a substrate temperature in a range between 100.degree.and 150.degree. C.
REFERENCES:
patent: 4970176 (1990-11-01), Tracy et al.
patent: 5155063 (1992-10-01), Ito
patent: 5232871 (1993-08-01), Ho
patent: 5266521 (1993-11-01), Lee et al.
patent: 5290731 (1994-03-01), Suagno et al.
patent: 5342808 (1994-08-01), Brigham et al.
patent: 5371042 (1994-12-01), Ong
Praminik et al, "Effect of Underlayer on Sputtered Aluminum Grain Structure and its Correlation with Step Coverage in Submicron Vias", VMIC Conference, Jun. 12-13, 1990, pp. 332-334.
S. Wolf, "Silicon Processing for the VLSI Era, vol. 1", Lattice Press, 1986, pp. 365-371.
Hibino Satoshi
Naito Masaru
Yamaha Takahisa
Bilodeau Thomas G.
Niebling John
Yamaha Corporation
LandOfFree
Method of manufacturing aluminum wiring at a substrate temperatu does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing aluminum wiring at a substrate temperatu, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing aluminum wiring at a substrate temperatu will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2328769