Method of producing a fin-shaped capacitor

Details Method of producing a fin-shaped capacitor Method of producing a fin-shaped capacitor

1995-05-26

1998-01-06

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 47, 437 60, 437919, 148DIG14, H01L 2170

Patent

active

057054207

ABSTRACT:
A method of forming a structure having a contact hole includes the steps of (a) forming an insulating layer on a first conductive layer, (b) forming a second conductive layer on the insulating layer, (c) forming an opening in the second conductive layer, (d) forming a conductive sidewall around an inner wall of the first conductive layer defining the opening, (e) selectively etching the insulating layer in a state where the second conductive layer and the conductive sidewall function as etching masks, so that the contact hole having a width smaller than that of the opening and defined by the conductive sidewall is formed, and the first conductive layer is exposed through the contact hole, and (f) removing the second conductive layer and the conductive sidewall.

REFERENCES:
patent: 4957874 (1990-09-01), Soejima
patent: 4970564 (1990-11-01), Kimura et al.
patent: 5021357 (1991-06-01), Taguchi et al.
patent: 5128273 (1992-07-01), Ema
Journal of the Electrochemical Society, vol. 138, No. 2, Feb. 1991, Manchster, New Hampshire US, pp. 619-620; Shih Wei Sun; "A Polysilicon Hard-Mask/Spacer Process for Sub-0.5 Micron ULSI Contacts".
Japanese Journal of Applied Physics, 21st Conference on Solid State Devices & Materials, Extended Abstracts, 28 Aug. 1989, Tokyo Japan, pp. 141-144; S. Inoue et al.: "A New Stacked Capacitor Cell With Thin Box Structured Storage Node".
T. Ema et al., "3-Dimensional Stacked Capacitor Cell for 16M and 64M Drams", International Electron Devices Meetings, 592-IEDM 88, Dec. 11-14, 1988.

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