Method for forming self-aligned silicide structure

Details Method for forming self-aligned silicide structure Method for forming self-aligned silicide structure

1996-06-19

1998-01-06

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 41, 437200, 148DIG147, H01L 21336

Patent

active

057054177

ABSTRACT:
An improved method for forming a self-aligned silicide structure with reduced bridging effect is disclosed. The method includes forming a gate oxide on a substrate. Then a polysilicon layer is formed on the gate oxide. The polysilicon layer and the gate oxide are then patterned using a photoresist mask which defines a gate region. Next, the substrate is lightly-doped to form lightly-doped source/drain regions. Dielectric spacers are formed on a sidewall of the gate, and portions of the polysilicon layer and the substrate are removed with the dielectric spacers serving as a mask. A conductive layer is formed on the gate and the substrate, and is then silicided. Afterward, the unsilicided portions of the conductive layer are removed. Finally, heavily-doped source/drain regions are formed on the substrate with the dielectric spacers serving as a heavy-doping mask.

REFERENCES:
patent: 4885259 (1989-12-01), Osinski et al.
patent: 5300455 (1994-04-01), Vuillermoz et al.
patent: 5352631 (1994-10-01), Sitaram et al.
patent: 5508212 (1996-04-01), Wang et al.

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