Fishing – trapping – and vermin destroying
Patent
1994-10-04
1998-01-06
Niebling, John
Fishing, trapping, and vermin destroying
437 52, 437203, H01L 218247
Patent
active
057054150
ABSTRACT:
A semiconductor device is formed having a floating gate memory cell (11) that has its channel region (33) oriented vertically with a portion of the channel region (33) that is not capacitively coupled to a floating gate (32). The memory cell (11) is less likely to be over-erased and may be programmed by source-side injection. The cell (11) may not need to be repaired after erasing. Less power may be consumed during programming compared to hot electron injection and Fowler-Nordheim tunneling.
REFERENCES:
patent: 4713677 (1987-12-01), Tigelaar et al.
patent: 4835740 (1989-05-01), Baglee
patent: 5017977 (1991-05-01), Richardson
patent: 5049515 (1991-09-01), Tzeng
patent: 5180680 (1993-01-01), Yang
patent: 5196722 (1993-03-01), Bergendahl et al.
patent: 5280446 (1994-01-01), Ma et al.
patent: 5315142 (1994-05-01), Acovic et al.
patent: 5338953 (1994-08-01), Wake
patent: 5382540 (1995-01-01), Sharma et al.
patent: 5429969 (1995-07-01), Chang
patent: 5460988 (1995-10-01), Hong
Pein, et al.; "Performance of the 3-D Sidewall Flash EPROM Cell;" IEDM; pp. 11-14 (1993), month unknown.
Naruke, et al.; "A New Flash-Erase EEPROM Cell With A Sidewall Select-Gate On Its Source Side;" IEDM; pp. 603-606 (1989), month unknown.
Chang Ko-Min
Orlowski Marius K.
Booth Richard A.
Meyer George R.
Motorola Inc.
Niebling John
LandOfFree
Process for forming an electrically programmable read-only memor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for forming an electrically programmable read-only memor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for forming an electrically programmable read-only memor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2328665