Method for producing a gate electrode for an MOS structure

Details Method for producing a gate electrode for an MOS structure Method for producing a gate electrode for an MOS structure

1996-12-23

1998-01-06

Dang, Trung

Fishing, trapping, and vermin destroying

437 40GS, 437 40SW, 437 41SW, 437228SW, H01L 21265

Patent

active

057054142

ABSTRACT:
A gate electrode for an MOS structure, such as a short-channel MOS transistor, is produced. First, a hard mask is created, using a spacer of the material of the gate electrode as the etching mask, and the hard mask is used to structure the gate electrode. The method is suitable particularly for the production of gate electrodes with very thin gate dielectrics with channel lengths below 100 nm.

REFERENCES:
patent: 4358340 (1982-11-01), Fu
patent: 5202272 (1993-04-01), Hsieh et al.
"Method for Making Submicron Dimensions in Structures Using Sidewall Image Transfer Techniques", Johnson et al., IBM Technical Disclosure Bulletin, vol. 26, No. 9, Feb. 1984, pp. 4587-4589.

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