Method of manufacturing an electronic device using thermally sta

Details Method of manufacturing an electronic device using thermally sta Method of manufacturing an electronic device using thermally sta

1996-10-08

1998-01-06

Trinh, Michael

Fishing, trapping, and vermin destroying

437 41TFT, 437173, 437 19, H01L 21786

Patent

active

057054134

ABSTRACT:
Thin-film circuit elements (M1,M2,M3,R) of a large-area electronic device such as an image sensor or flat panel display are formed with different crystallinity portions (1a,1b) of a semiconductor film (1). Highly crystalline portions (1a) are formed by exposure to an energy beam (25), for example from an excimer laser, while amorphous or low-crystalline portions (1b) are masked by a masking pattern of thermally-stable absorbent or reflective inorganic material (21) on an insulating barrier layer (20). The barrier layer (20) of, for example, silicon oxide has a sufficient thickness (t.sub.b) to mask the amorphous or low-crystallinity film portions (1b) from heating effects in the inorganic material, such as for example heat diffusion and/or impurity diffusion from the inorganic material (21). This type of masking pattern (20,21) in accordance with the invention is stable and versatile, permitting fabrication of interposed small-area components of different crystallinity in a thin-film circuit and capable of use for masking further processing treatments in earlier and/or later stages in the manufacture, for example an ion implantation (35).

REFERENCES:
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patent: 4561906 (1985-12-01), Calder et al.
patent: 4619034 (1986-10-01), Janning
patent: 4931424 (1990-06-01), Henty
patent: 4933298 (1990-06-01), Hasegawa
patent: 5130829 (1992-07-01), Shannon
patent: 5382537 (1995-01-01), Noguchi
patent: 5405804 (1995-04-01), Yabe

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