Reactive ion etching to physically etch thin film semiconductor

Details Reactive ion etching to physically etch thin film semiconductor Reactive ion etching to physically etch thin film semiconductor

1995-06-07

1998-01-06

Trinh, Michael

Fishing, trapping, and vermin destroying

437 41TFI, 437101, 437228PE, H01L 2184

Patent

active

057054118

ABSTRACT:
A thin film semiconductor device includes a gate electrode, a gate insulating electrode, a thin film semiconductor layer, an ohmic layer, source and drain electrodes, and a protective layer. The protective layer contains an impurity for controlling conductivity.

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