Field effect transistor having a graded bandgap InGaAsP channel

Details Field effect transistor having a graded bandgap InGaAsP channel Field effect transistor having a graded bandgap InGaAsP channel

1995-10-18

1997-01-21

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257191, 257190, H01L 3526

Patent

active

055962114

ABSTRACT:
A two dimensional electron gas field effect transistor comprising a buffer layer, a channel layer and an N-type electron supply layer formed on a semi-insulating, InP substrate in the named order. The channel layer is formed of an In.sub.1-x Ga.sub.x As.sub.y P.sub.1-y layer, the composition ratios "x" and "y" changing in a depth direction.

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Anonymous, "Si/SiGe Heterostructure MoS Devices with Step Graded Bandgap Profile of the SiGe Channel", IBM Technical Disclosure Bulletin, vol. 36, No. 3, Mar. 1993, pp. 127-129.
Sze, S. M., Semiconductor Physics, 1985, pp. 267-268.
Shieh et al., "A High Performance S-Doped GaAs/In.sub.x Ga.sub.1-x As Pseudomorphic High Electron Mobility Transistor Utilizing a Graded In.sub.x Ga.sub.1-x As Channel", IEEE Electron Device Letters, vol. 14, No. 12, Dec. 1993, pp. 581-583.
By W. Hong et al., "High-Breakdown, High-Gain InAlAs/InGaAsP Quantum-Well HEMT's", Oct. 1991, vol. 12, No. 10, IEEE Electron Device Letters, pp. 559-561.
By T. Akazaki et al., "Improved InAlAs/InGaAs HEMT Characteristics by Inserting an InAs Layer into the InGaAs Channel", Jun. 1992, vol. 13, No. 6, IEEE Electron Device Letters, pp. 325-327.

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