Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1994-11-22

1997-01-21

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437189, 437192, 437246, 430311, 430313, H01L 21469

Patent

active

055959385

ABSTRACT:
A method of manufacturing a semiconductor device includes the steps of forming an interconnection layer consisting of a metal material on a substrate, and forming an anti-reflection film including a compound having metal-silicon-oxygen on this interconnection layer using the same metal material as the material used for this interconnection layer. Thus, it is made possible to form interconnection layer and anti-reflection film by the same apparatus and it is also made possible to treat interconnection layer and anti-reflection film with the same etchant. As a result, efficiency in the method of manufacturing the semiconductor device including an anti-reflection film can be improved.

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"Optical Absorption as a Control Test for Plasma Silicon Nitride Deposition", Myron J. Rand et al., Solid-State Science and Technology, pp. 99-101, Jan. 1978.

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