Method for fabricating capacitor of a semiconductor device

Details Method for fabricating capacitor of a semiconductor device Method for fabricating capacitor of a semiconductor device

1995-06-19

1997-01-21

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 47, 437919, 148DIG14, H01L 2170

Patent

active

055959318

ABSTRACT:
A method for fabricating a capacitor useful for ultra large scale integration semiconductor devices of 64M DRAM or larger, comprising the steps of: laminating a plurality of insulating layers which are different in etch selection ratio from one another; selectively etching the insulating layers to make a cavity between the insulating layers; depositing a polysilicon layer for a storage electrode over the resulting structure, to fill the cavity; and subjecting the polysilicon layer to etch back to form a spacer.

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patent: 5449635 (1995-09-01), Jun

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