Process for thickening selective gate oxide regions

Details Process for thickening selective gate oxide regions Process for thickening selective gate oxide regions

1994-10-28

1997-01-21

Fourson, George

Fishing, trapping, and vermin destroying

437 56, 437979, 437983, H01L 21265, H01L 2170, H01L 2700

Patent

active

055959229

ABSTRACT:
One embodiment of the present invention is a method of simultaneously forming high-voltage (12) and low-voltage (10) devices on a single substrate (14), the method comprising: forming a thin oxide layer (18) on the substrate, the thin oxide layer having a desired thickness for a gate oxide for the low-voltage device; selectively forming a gate structure (30) for the high-voltage device, the thin oxide is situated between the gate structure and the substrate; and selectively thickening the thin oxide under the gate structure while keeping the thin oxide layer utilized for the low-voltage device at the desired thickness.

REFERENCES:
patent: 4313256 (1982-02-01), Widmann
patent: 4516313 (1985-05-01), Turi et al.
patent: 5057449 (1991-10-01), Lowrey et al.
patent: 5208175 (1993-05-01), Choi et al.
patent: 5314834 (1994-05-01), Mazure et al.
patent: 5371026 (1994-12-01), Hayden et al.

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