Process for manufacture of P channel MOS-gated device

Details Process for manufacture of P channel MOS-gated device Process for manufacture of P channel MOS-gated device

1995-03-23

1997-01-21

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 41, 437979, H01L 21265

Patent

active

055959180

ABSTRACT:
There is described a process for making a P channel MOS gated device in which N.sup.- bases are first formed through a patterned polysilicon gate structure. A central N.sup.+ contact is then formed in the center of the surface of each N.sup.- base in a second non-critical mask step. A thermal oxide is then grown atop the N.sup.- and N.sup.+ surfaces of each base with differential thickness, the N.sup.+ surface region growing a thicker oxide. A P.sup.+ source implant is then carried out, penetrating only the thinner oxide over the N.sup.- surfaces. Contact openings are then formed in a third mask process and contact metal is deposited in contact with the P.sup.+ and N.sup.+ regions. A ring-shaped termination is simultaneously formed, using the same process steps.

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