Method for heteroepitaxial growth using tensioning layer on rear

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148DIG56, 148149, 148DIG72, 148DIG97, 148 333, 156612, 156610, 437132, 437247, 437245, 437939, 437976, H01L 2120, H01L 2926, H01L 736

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048309842

ABSTRACT:
A method, and products formed by such method, of providing a substantially planar surface to a layer of semiconducting material (24) formed on a first surface of a substrate (20), the substrate having a second surface opposite the first surface. The method comprising forming a layer (22) of a first material on the second surface of the substrate; forming a layer of the semiconducting material (24) on the first surface of the substrate; whereby said layer of said first material exerts a tensioning force on said second surface of the substrate (20) which countereffects a tensioning force exerted on said first surface of said substrate by said layer of semiconductor material (24) so that said first surface of said substrate has a substantially planar form. In some embodiments tensioning forces arise due to differential thermal expansion of said first material and said substrate and said semiconductor material and said substrate.

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