Method of enhanced introduction of impurity species into a semic

Details Method of enhanced introduction of impurity species into a semic Method of enhanced introduction of impurity species into a semic

1987-11-05

1989-05-16

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437162, 437987, H01L 3100, H01L 3300, H01L 2100, H01L 2122

Patent

active

048309834

ABSTRACT:
A two step annealing process is utilized for performing imputity induced disordering comprising an initial higher temperature, shorter term or rapid thermal anneal (RTA) treatment followed by a lower temperature, longer term or slow thermal anneal (STA) treatment. This two step impurity induced disordering (IID) anneal process enhances the amount of and depth of impurity species or diffusant penetration into the crystalline structure undergoing IID treatment. Also, it provides for improved accuracy in controlling the extend of impurity species concentration and the extent of its penetration into the cyrstalline structure so that resulting diffusion profiles in such structures can be systematically reproduced.

REFERENCES:
patent: 3530015 (1970-09-01), Antell
patent: 4378255 (1983-03-01), Holonyak, Jr. et al.
patent: 4594603 (1986-06-01), Holonyak, Jr.
patent: 4615766 (1986-10-01), Jackson et al.
patent: 4632713 (1986-12-01), Tiku
patent: 4634474 (1987-01-01), Camlibel et al.
patent: 4639275 (1987-01-01), Holonyak, Jr.
patent: 4642879 (1987-02-01), Kawata et al.
patent: 4743569 (1988-05-01), Plumton et al.
G. R. Antell et al., "The Diffusion of Silicon in Gallium Arsenide", Solid-State Electronics, vol. 8, pp. 943-946 (1965), Pergamon Press, Gt. Brit.
E. Omura et al., "Closed-Tube Diffusion of Silicon in GaAs from Sputtered Silicon Film", Electronic Letters, vol. 22(9), pp. 496-498 (Apr. 24, 1986).
T. Onuma et al., "Study of Encapsulants for Annealing Si-Implanted GaAs", Journal of Electrochemical Society, vol. 129(4), pp. 837-840 (Apr. 1982).
M. E. Greiner et al., "Diffusion of Silicon in Gallium Arsenide Using Rapid Thermal Processing: Experiment and Model", Applied Physics Letters, vol. 44(8), pp. 750-752 (Apr. 15, 1984).
J. Kobayashi et al., "Effect of Rapid Thermal Annealing for the Compositional Disordering of Si-Implanted AlGaAs/GaAs Superlattices", Applied Physics Letters, vol. 50(9), pp. 519-521 (Mar. 2, 1987).
K. L. Kavanagh et al., "Silicon Diffusion At Polycrystalline-Si/GaAs Interfaces", Applied Physics Letters, vol. 47(11), pp. 1208-1210 (Dec. 1, 1985).
K. L. Kavanagh et al., "The Polycrystalline-Si Contact to GaAs", Journal of the Electrochemical Society, vol. 133(6), pp. 1176-1179 (Jun., 1986).
E. Omura et al., "Silicon Diffusion Into Al.sub.x Ga.sub.1-x As (x=0-0.4) From A Sputtered Silicon Film", Applied Physics Letters, vol. 50(5), pp. 265-266 (Feb. 2, 1987).
Tae Earn Shim et al., "Si Film As An Annealing Cap for Si-Implanted GaAs", Applied Physics Letters, vol. 48(10), pp. 641-643 (Mar. 10, 1986).
R. L. Thornton et al., "Low Threshold Planar Buried Heterostructure Lasers Fabricated by Impurity-Induced Disordering", Applied Physics Letters, vol. 47(12), pp. 1239-1241 (Dec. 15, 1985).
Meehan et al., Applied Physics Letters, vol. 45(5), "Disorder of Al.sub.x Ga.sub.1-x As-GaAs Superlattice by Donor Diffusion" (Sep. 1, 1984), pp. 549-551.
Thornton et al., Applied Physics Letters, vol. 49(3), "Highly Efficient, Long Lived AlGaAs Lasers Fabricated by Silicon Impurity Induced Disordering" (Jul. 21, 1986), pp. 133 and 134.

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