Making complementary integrated p-MODFET and n-MODFET

Details Making complementary integrated p-MODFET and n-MODFET Making complementary integrated p-MODFET and n-MODFET

1988-04-22

1989-05-16

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 40, 437 57, 437 58, 357 16, 357 40, 357 22, H01L 2118

Patent

active

048309800

ABSTRACT:
An integrated circuit device consisting of an n-channel selectively doped heterojunction transistor (SDHT) and a p-channel SDHT, in the form of complementary MODFETs fabricated on the same wafer, is disclosed. A method for easily fabricating the complementary p- and n-MODFETs on the same wafer is also disclosed whereby a portion of a partially formed n-channel SDHT is implanted with p-type ions of sufficient dosage to transform the portion into a p-channel SDHT. The device is completed by etching an isolation gap between the n-channel and p-channel region, preferably no more than ten microns wide, and adding ohmic source and drain contacts as well as Schottky gate contacts. Many such MODFET pairs may be fabricated on a single wafer.

REFERENCES:
patent: 4603469 (1986-08-01), Armiento et al.
patent: 4641161 (1987-02-01), Kim et al.
patent: 4652896 (1987-03-01), Das et al.
patent: 4662058 (1987-05-01), Cirillo, Jr. et al.
patent: 4710478 (1987-12-01), Yoder et al.

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