Merged complementary bipolar and MOS means and method

Details Merged complementary bipolar and MOS means and method Merged complementary bipolar and MOS means and method

1987-10-06

1989-05-16

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 56, 437 34, 437 59, 357 34, 357 43, 148DIG9, H01L 21265

Patent

active

048309737

ABSTRACT:
A means and method for forming improved merged complementary bipolar, complementary MOS (CBICMOS) structures is described. The N-channel and N-base devices are grouped in a first isolated semiconductor region and the P-channel and P-base devices are grouped in a second isolated semiconductor region. The two regions are separated by lateral isolation. By sharing internal device regions and arranging the internal device regions in the proper sequence a particularly compact structure is obtained which may be wired to implement a variety of CBICMOS circuits using a single wiring layer. Both CMOS and vertical NPN and PNP bipolar devices are produced in a common substrate by a common process.

REFERENCES:
patent: 3370995 (1968-02-01), Lowery
patent: 3648128 (1972-03-01), Kobayashi
patent: 4311532 (1982-01-01), Taylor
patent: 4362574 (1982-12-01), Gevandyan
patent: 4378630 (1983-04-01), Horng
patent: 4402003 (1983-08-01), Blanchard
patent: 4546370 (1985-10-01), Curran
patent: 4577397 (1986-03-01), Komatsu
patent: 4583106 (1986-04-01), Anantha
patent: 4589004 (1986-03-01), Yasuda
patent: 4593459 (1986-06-01), Poppert
patent: 4599789 (1986-07-01), Gasner
patent: 4639761 (1987-01-01), Singer et al.
patent: 4646124 (1987-02-01), Zunino
patent: 4729007 (1988-03-01), Coe
Zollo, S. Electronics 7/24/86, pp. 97-101.

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