Semiconductor light emitting element and optical fiber transmiss

Details Semiconductor light emitting element and optical fiber transmiss Semiconductor light emitting element and optical fiber transmiss

1997-12-11

2000-01-25

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 29, 372 34, H01S 3025

Patent

active

060185406

ABSTRACT:
Disclosed are a semiconductor light emitting element whose temperature characteristics are compensated for so as to provide a stable temperature characteristics in a temperature range from -40.degree. C. to +85.degree. C., and an optical fiber transmission system using the same semiconductor light emitting element. In the semiconductor light emitting element, an active layer (2) is buried on an n-type InP semiconductor substrate (1) formed with an n-side electrode (21). The upper layers (4, 5) are covered with an insulating film (22). A p-side electrode (20) is formed on the uppermost layer of the semiconductor substrate so as to cover the insulating film (22). A relatively large metallic resistance element (30) whose resistance increases with increasing temperature is wired on the insulating film (22) as a shunt path, so as to compensate for the temperature characteristics of the semiconductor light emitting element. Therefore, since leakage current is large at a low temperature, the threshold current is high, so that the slope efficiency is small. On the other hand, since leakage current is reduced at a high temperature, a rise in the threshold current and a drop of the slope efficiency can be both compensated for.

REFERENCES:
patent: 5825047 (1998-10-01), Ajisawa et al.

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