Sense amplifier for use with a semiconductor memory array

Details Sense amplifier for use with a semiconductor memory array Sense amplifier for use with a semiconductor memory array

1982-06-18

1985-08-13

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307468, 365104, 365196, G11C 706, G11C 900, G11C 1704, G11C 1140

Patent

active

045352593

ABSTRACT:
A sense amplifier (124) for use in determining the binary state of a selected storage device (4) in a semiconductor memory array (2) is disclosed. The sense amplifier (124) comprises a sensing section (150), a reference signal generator (148), and an inverting amplifier section (152). A relatively small current transistor (164) connected between a source of operating potential (158) and a voltage node (162) in the sensing section (150) supplies read currents to the selected storage device (4) via an enabled bit line (8) in the array (2). A second transistor (168) of relatively large size connected to the voltage node (162) in parallel with the current transistor (164) operates to rapidly raise the potential on the bit line (8) when the bit line (8) is first enabled. A third transistor (166) also of relatively large size connected between the voltage node (162) and the bit line (8) serves as a transfer gate for read currents. The reference signal generator (148) feeds a reference potential V.sub.ref to the control gates of the second and third transistors (168, 166), thereby establishing a quiescent bit line potential. The binary state of the selected storage device (4) can then be ascertained by sensing whether the voltage at the voltage node (162) drops in response to current flow through the enabled bit line (8) and selected storage device (4). Any voltage drop at the voltage node (162) which does occur is detected and amplified by the inverting amplifier section (152) of the sense amplifier.

REFERENCES:
patent: 4223394 (1980-09-01), Pathak et al.
patent: 4443718 (1984-04-01), Hagiwara et al.

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