Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1992-02-04

1993-07-13

Scott, Jr., Leon

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

052280489

ABSTRACT:
A semiconductor laser device includes a p type semiconductor substrate, an active layer having a smaller energy band gap than the p type semiconductor substrate and an n type semiconductor layer having a larger energy band gap than the active layer successively formed on the p type semiconductor substrate, a mesa formed by selectively etching the semiconductor substrate, active layer, and n type semiconductor layer, p-n-p layers having larger energy band gaps than the active layer and disposed at both sides of the mesa, a small energy band gap layer having a smaller energy band gap than the p type semiconductor substrate and disposed on the p-n-p layers, and an n type semiconductor layer disposed on the small energy band gap layer and on the n type semiconductor layer. The small energy band gap layers decrease the current flowing through the thyristor structure and are disposed close to the active region but in a different processing step from the formation of the active layer. A waveguide structure in which the active layer is surrounded by semiconductor layers having larger energy band gaps is realized.

REFERENCES:
patent: 4849372 (1989-07-01), Takemoto
patent: 4977568 (1990-12-01), Yamamoto et al.
patent: 4984244 (1991-01-01), Yamamoto et al.
patent: 5042049 (1991-08-01), Ohtoshi et al.
patent: 5111469 (1992-05-01), Narui et al.
patent: 5148439 (1992-09-01), Wunstel et al.
Prescript of 20th Meeting of Japanese Society of Applied Physics, 1982, p. 155.
Prescript of 33rd Meeting of Japanese Society of Applied Physics, 1986, p. 158.

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