Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1998-02-05
2000-01-25
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257215, H01L 27148
Patent
active
060181699
ABSTRACT:
There is provided a solid-state image sensor including a photodetector array in which a plurality of photodetectors are one- or two-dimensionally arranged, each one of the photodetctors including an electrode in a photoelectric conversion region, and transmitting signals when detecting a light passing through the electrode, the solid-state image sensor converting the signals into time sequence electric signals, the electrode being composed of titanium dioxide (TiO.sub.2). The titanium dioxide preferably contains oxygen vacancies or at least one of tungsten (W), phosphorus (P), antimony (Sb), tantalum (Ta), niobium (Nb), indium (In) and oxides thereof (WO.sub.3, P.sub.2 O.sub.5, Sb.sub.2 O.sub.5, Ta.sub.2 O.sub.5, Nb.sub.2 O.sub.5, In.sub.2 O.sub.3). The above-mentioned solid-state image sensor provides a high quantum efficiency which would be obtained when transparent, electrically conductive material such as ITO (In.sub.2 O.sub.3 --SnO.sub.2) and tin oxide (SnO.sub.2) is used. In addition, the solid-state image sensor enhances designability and productivity, since it has no limitation in fabrication which would exist when the above-mentioned transparent, electrically conductive material is used.
REFERENCES:
patent: 4242694 (1980-12-01), Keike et al.
"Properties of Rutile (Titanium Dioxide)" F.A. Grant; Reviews of Modern Physics, vol. 31, No. 3, 1959; pp. 646-674.
"Electrical and optical properties of TiO.sub.2 anatase thin films" Tang et al; vol. 75, No. 4, 1994; Journal of Applied Physics; pp. 2042-2047.
"Transparent Metal Oxide Electrode CID Imager" Brown et al; IEEE Journal of SOlid-State Circuits, vol. SC-11, No. 1, Feb. 1976; pp. 128-132.
"Buried-Channel CCD Imaging Arrays with Tin-Oxide Transparent Gates" McCann et al; IEEE International Solid-State Circuites Conferences; Feb. 15, 1978; pp. 30-31 and pp. 261-262.
"A Tin Oxide Transparent-Gate Buried-Channel Virtual-Phase CCD Imager" Deenan et al IEEE Transactions on Electron Devices, vol. ED-32, No. 8; Aug. 1985; pp. 1531-1533.
Meier Stephen D.
NEC Corporation
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