Lead-europium selenide-telluride heterojunction semiconductor la

Coherent light generators – Particular active media – Semiconductor

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357 16, 357 17, 357 61, 372 45, H01S 319, H01L 3300

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active

046086943

ABSTRACT:
A double heterojunction lead salt diode infrared laser having an active region layer of a lead salt semiconductor of a given lattice constant, energy band gap, and index of refraction. The active region layer is sandwiched between two lead salt semiconductor layers containing europium and selenium that are mutually of opposite conductivity type and have substantially the same lattice constant as the active region layer. In addition, the europium and selenium-containing lead chalcogenide layers have an energy band gap greater than the active region layer and an index of refraction less than the active region layer. Hence, the laser has lattice matching, as well as enhanced carrier confinement and optical confinement.

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