Semiconductor device having non-saturating I-V characteristics a

Details Semiconductor device having non-saturating I-V characteristics a Semiconductor device having non-saturating I-V characteristics a

1983-07-20

1986-08-26

Wojciechowicz, Edward J.

357 41, 357 43, 357 46, 357 55, 357 92, H01L 2980

Patent

active

046085823

ABSTRACT:
The new kind of field effect transistor having a non-saturating characteristic, i.e. static induction transistor (SIT), proposed by the present inventor is modified to serve as a substitute of any conventional bipolar transistor in a given circuitry. That is, the gate-to-gate distance and the impurity concentration of the channel region of an SIT are so selected that the channel is pinched off by the depletion layer at a predetermined forward gate bias. When the forward gate bias applied is below a certain level, the drain current will increase fundamentally exponentially with an increase of the drain voltage above some threshold voltage, whereas when the gate bias applied is above the certain value, the drain current will increase rapidly with a small increase in the drain voltage.

REFERENCES:
patent: Re29971 (1972-07-01), Nishizawa et al.
patent: 3808515 (1974-04-01), Davis et al.
patent: 4115797 (1978-09-01), Hingarh et al.

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