Lithographic mask and method for fabrication thereof

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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2504922, G03F 900

Patent

active

06017658&

ABSTRACT:
Improvement in resolution in terms of minimum feature sizes and proximity fects in an electronic mask is attained by making the mask using a high voltage electron beam which deflects or blocks backscattered electrons. The novel mask structure comprises a transparent support, an absorber layer disposed on said support, a dielectric layer disposed on said absorber layer, and a resist layer disposed on said dielectric layer. It is the dielectric layer which is credited for improving resolution in said mask which can be used a multiple number of times in printing a pattern for various applications, including electronic devices and integrated circuits.

REFERENCES:
patent: 4463265 (1984-07-01), Owen et al.
patent: 4764441 (1988-08-01), Ohta et al.

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