Plasma-enhanced chemical vapor deposited SIO.sub.2 /SI.sub.3 N.s

Details Plasma-enhanced chemical vapor deposited SIO.sub.2 /SI.sub.3 N.s Plasma-enhanced chemical vapor deposited SIO.sub.2 /SI.sub.3 N.s

1998-09-21

2000-01-25

Speer, Timothy M.

Stock material or miscellaneous articles

Structurally defined web or sheet

Discontinuous or differential coating, impregnation or bond

428446, 428698, 428701, 428702, 257760, B32B 300

Patent

active

060176148

ABSTRACT:
A method was achieved for forming a multilayer passivation layer comprised of a silicon oxide/silicon nitride/silicon oxide/silicon nitride by depositing the layers consecutively in a single PECVD system. The method consists of depositing a first SiO.sub.2 layer that serves as a stress-release layer, a thin Si.sub.3 N.sub.4 layer that serves as a buffer layer that minimizes cracking and as a passivation layer that prevents mobile alkaline ion penetration, a thin second SiO.sub.2 layer to fill and seal any remaining cracks and pinholes in the first Si.sub.3 N.sub.4 layer, and a main Si.sub.3 N.sub.4 passivation layer that prevents water and/or other corrosive chemicals from attacking the metal. Since this multilayer passivation layer can be deposited essentially pinhole-free to a thickness that is less than the prior art's passivation layer of 8000 Angstroms needed to prevent pinholes, it can be used on 0.38 to 0.25 um DRAM technology, which eliminates voids that could otherwise trap photoresist which can later cause corrosion of the metal lines.

REFERENCES:
patent: 4692786 (1987-09-01), Lindenfelser
patent: 4707721 (1987-11-01), Ang et al.
patent: 5399518 (1995-03-01), Sim et al.
patent: 5712202 (1998-01-01), Liaw et al.

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