Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1991-09-17
1993-07-13
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
505 1, 505846, 505702, 257 36, H01L 3922, H01B 1200, G01R 33035
Patent
active
052276457
ABSTRACT:
In a dc SQUID element having two quasi-planar-type Josephson junction portions, as obtained by laminating a plurality of superconducting thin films on a substrate, a SQUID ring and a counter electrode on either of which quasi-planar-type Josephson junction portions are to be formed, are respectively formed at the lowermost layer and the uppermost layer, or at the uppermost layer and the lowermost layer, so that the value of critical current can be adjusted. The arrangement above-mentioned assures good flatness and film quality of a barrier layer interposed between the lower and upper electrodes of the quasi-planar-type Josephson junction portions. In a method of manufacturing the dc SQUID element having the arrangement above-mentioned, a protective film is formed on the thin film of the lowermost layer at the position where Josephson junction portions are to be formed, after which layers except for a thin film of the uppermost layer are formed, and the protective film is then removed immediately before the uppermost-layer thin film is formed, thus preventing damages to the Josephson junction forming area in the course of production of the dc SQUID element.
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Richter et al., "Superconducting Quantum Interferometers made of Thin Films", Instruments and Experimental Techniques, (USSR) vol. 17, No. 4, Pt. 2, pp. 1196-1198, Jul. Aug. 1974.
Harris et al., "Production of Weak Links in Superconducting Thin Films by Ion Implantation", IBM Technical Disclosure Bulletin, vol. 17, No. 9 Feb. 1975 pp. 27-28.
Hille Rolf
Saadat M.
Shimadzu Corporation
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