Process for manufacturing isolated semi conductor components in

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257511, 257513, 257514, 257515, 257559, 257622, H01L 2704

Patent

active

054573386

ABSTRACT:
A process for manufacturing isolated semi conductor components in a semi conductor wafer of the type used in bipolar technology. In this process, polycrystalline silicon is deposited in a recess in a silicon substrate whose walls are insulated by a silicon nitride layer except for an opening formed in this nitride layer at the bottom of said recess. Then, the polycrystalline silicon is re-epitaxied so as to become monocrystalline silicon by thermal heating from the "nucleus" formed by the underlying silicon in said opening.

REFERENCES:
patent: 4111724 (1978-10-01), Ogiue et al.
patent: 4445268 (1984-05-01), Hirao
patent: 4494303 (1985-01-01), Celler et al.
patent: 4498951 (1985-02-01), Tamura et al.
patent: 4523962 (1985-06-01), Nishimura
patent: 4565584 (1986-01-01), Tamura et al.
patent: 4609407 (1986-09-01), Masao et al.
Borland, John O., "Advanced Dielectric Isolation Through Selective Epitaxial Growth Techniques", Solid State Technology, Aug. 1985, pp. 141-148.
Yu, H. N., "Fabrication of Planar Arrays of Semiconductor Chips by Epitaxial Growth", vol. 7, No. 11, Apr. 1965, p. 1104.
Claasen, W. A. P., "the Nucleation of CVD Silicon on SiO, and SiN Substrates", Auger Depth Profile Studies, vol. 128, No. 6, pp. 1353-1359.
Tanno, Kohetsu, "Selective Silicon Epitaxy Using Reduced Pressure Technique" Japanese Journal of Applied Physics, vol. 21, No. 9, Sept. 1982, pp. L564-L566.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Process for manufacturing isolated semi conductor components in does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for manufacturing isolated semi conductor components in , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for manufacturing isolated semi conductor components in will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2312237

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.