Process for fabricating semiconductor devices using a solid reac

Details Process for fabricating semiconductor devices using a solid reac Process for fabricating semiconductor devices using a solid reac

1991-12-16

1993-07-13

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437228, 437233, 437235, 427 69, 427 70, H01L 2100, H01L 2102, H01L 21302, H01L 21463

Patent

active

052273407

ABSTRACT:
A solid source chemical vapor deposition apparatus and a CVD method for fabricating semiconductor devices are disclosed. In accordance with the process for fabricating semiconductor devices, a CVD reactor chamber having a solid reactant source apparatus coupled thereto is provided. The reactant source apparatus includes a container which can be heated in a controllable manner and which has a gas diffuser located in the container. The container is provided with gas input and output which are located so that a carrier gas can be passed through the gas diffuser and through a finely divided solid reactant source material which is positioned over the gas diffuser. The carrier gas together with any vapor derived from the solid reactant source material is conveyed from the outlet of the reactant source apparatus to the CVD reactor chamber. Semiconductor substrates are positioned in the CVD reaction chamber, are heated, and are subjected to the carrier gas and the source vapor to deposit a layer of the source material on the substrates.

REFERENCES:
patent: 4557950 (1985-12-01), Foster et al.
patent: 4727241 (1988-02-01), McWilliams
patent: 4817557 (1989-04-01), Diem et al.
Wolf, Silicon Processing for the VLSI Era, vol. 1, Lattice Press, 1986, p. 369.

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