Tungsten chemical vapor deposition method

Details Tungsten chemical vapor deposition method Tungsten chemical vapor deposition method

1991-12-27

1993-07-13

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 7, 437 8, 437187, 437926, H01L 2144

Patent

active

052273369

ABSTRACT:
A tungsten film is formed in two steps in a tungsten chemical vapor deposition method of the present invention. In a first step, a first thin tungsten film is selectively grown on a surface of a silicon substrate by a silicon reduction using a WF.sub.6 gas as a tungsten source, followed by a second step in which another tungsten film is formed on the first tungsten film by a silane reduction using a WF.sub.6 gas as a tungsten source. The state of the silicon substrate surface is monitored by a pyrometer, and the timing of change from the silicon reduction to the silane reduction is determined on the basis of the intensity of the infrared ray radiation.

REFERENCES:
patent: 4751101 (1988-06-01), Joshi
patent: 4823291 (1989-04-01), Berman
patent: 4913790 (1990-04-01), Narita et al.
patent: 5071789 (1991-12-01), Nakata
patent: 5128278 (1992-07-01), Harada et al.
The IEEE Electron Devices Society, 1988 Symposium on VLSI Technology, May , 1988, pp. 97-98, A. Nishiyama, et al., "Two Step Tungsten Selective CVD for High Speed CMOS Device Applications".
Solid State Technology, vol. 28, No. 12, Dec. 1985, pp. 51-59, Eliot K. Broadbent, et al., "Selective Tungsten Processing by Low Pressure CVD".
Journal of the Electrochemical Society, vol. 138, No. 3, Mar. 1991, pp. 783-788, J. Holleman, et al., "A Reflectometric Study of the Reaction Between Si and WF6 During W-LPCVD on Si and of the Renucleation During the H.sub.2 Reduction of WF.sub.6 ".
Wolf; "Silicon Processing for the VLSI Era"; vol. 2; pp. 245-247; 1990.

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