Method of manufacturing semiconductor integrated circuit bipolar

Details Method of manufacturing semiconductor integrated circuit bipolar Method of manufacturing semiconductor integrated circuit bipolar

1991-09-20

1993-07-13

Quach, T. N.

Fishing, trapping, and vermin destroying

437 90, 437193, 437162, H01L 21328

Patent

active

052273172

ABSTRACT:
A method of manufacturing a bipolar transistor having a base lead-out electrode provided so as to surround an emitter region to be formed on a main surface of a semiconductor substrate and also having an emitter lead-out electrode provided along a stepped shape of the base lead-out electrode and connected to said emitter region is characterized by forming a first silicon film selectively only in an area surrounded by the base lead-out electrode. Impurity is introduced into the first silicon film and then diffused into the main surface of the semiconductor substrate to form the emitter region. Finally, a second silicon film is formed on the first silicon film to serve as the emitter lead-out electrode.

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