Semiconductor device including silicon ladder resin layer

Details Semiconductor device including silicon ladder resin layer Semiconductor device including silicon ladder resin layer

1993-03-31

1996-04-23

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257638, 257760, H01L 2156, H01L 2190

Patent

active

055106536

ABSTRACT:
Disclosed herein is a semiconductor device having a multilayer interconnection structure, which is provided with a plurality of via holes having constant diameters. Patterns of a first interconnection layer are provided on a semiconductor substrate. An interlayer insulating film is provided over the semiconductor substrate, to cover the patterns of the first interconnection layer. A silicon ladder resin film is applied onto the surface of the interlayer insulating film, to flatten the same. First and second via holes are provided through the silicon ladder resin film and the interlayer insulating film, to expose first and second coupling portions provided on the surfaces of the patterns of the first interconnection layer. A second interconnection layer is provided over the semiconductor substrate, to be connected with the first and second coupling portions through the first and second via holes respectively.

REFERENCES:
patent: 4349609 (1982-09-01), Takeda et al.
patent: 5177588 (1993-01-01), Ii et al.

Affiliated with

Also associated with

Rating

Semiconductor device including silicon ladder resin layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device including silicon ladder resin layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device including silicon ladder resin layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2311046