Polishstop planarization structure

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

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257759, 257760, 257774, H01L 21304, H01L 23485

Patent

active

055106528

ABSTRACT:
The invention provides a method for producing a substantially planar surface overlying features of a semiconductor structure. The method comprises forming alternating layers of a hard polishing material and a soft polishing material over the features of the semiconductor structure, and then polishing the alternating layers to form a substantially planar surface over the features. The method takes advantage of the polish rates of the various materials used as alternating layers to enhance the planarization process.

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