Layered amorphous silicon electrophotographic photosensitive mem

Details Layered amorphous silicon electrophotographic photosensitive mem Layered amorphous silicon electrophotographic photosensitive mem

1986-12-18

1988-03-08

Welsh, J. David

Radiation imagery chemistry: process, composition, or product th

Electric or magnetic imagery, e.g., xerography,...

Radiation-sensitive composition or product

430 66, G03G 514

Patent

active

047299371

ABSTRACT:
An electrophotographic photosensitive member wherein a photoconductive layer prepared from amorphous silicon is interposed between a barrier layer and surface layer, both prepared from boron nitride, and which is characterized in that it has a high specific resistivity, and, when applied as a barrier layer, indicates a high charge retention capability, strains in said barrier layer are reduced, the surface layer absorbs very little light and allows for the permeation of the greater part of the incoming light rays, thus preventing the photosensitivity of a photoconductive layer and the residual potential from being deteriorated, and since the concentration of boron varies in the boundary of the respective layer across their thickness, the photoconductive property can be sustained and the exfoliation of the layers can be avoided.

REFERENCES:
patent: 4600672 (1986-07-01), Fujimura et al.
patent: 4624905 (1986-11-01), Haku et al.

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