Process for fabricating device having titanium-tungsten barrier

Details Process for fabricating device having titanium-tungsten barrier Process for fabricating device having titanium-tungsten barrier

1994-08-31

1995-10-10

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437200, 437201, H01L 2144, H01L 21443

Patent

active

054570697

ABSTRACT:
A process for fabricating a device having a TiW barrier layer and a relatively shallow junction contacted with a silicide layer wherein said TiW barrier layer and said silicide layer are simultaneously formed comprising steps of preparing a Si substrate, applying a layer including therein a Ti and an appropriate X element such as Co or Pt on the Si substrate, applying a W layer on the layer including therein the Ti and the X element for forming a W/X-Ti/Si structure, and transforming the W/X-Ti/Si structure into a TiW/silicide/Si structure to obtain the device having a TiW barrier layer and a silicide layer contacted shallow junction. The present invention provides a simplified process for fabricating such a device having therewith a junction of a low resistance and a high temperature stability.

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